MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Author: IMANISHI SADAYUKI
• Format: Patent
• Language: English
• Published: 14.03.1990
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To prevent any abnormal oxidation from occurring thus enabling a low temperature formed silicon dioxide film containing required silicide surface to be completely oxidized stably by a method wherein a silicon dioxide film is formed even on the whole surface of a silicide film once heat-treated. CONSTITUTION:A silicide once high temperature heat-treated after deposition in the grain state is coated with a silicon dioxide film 7 by CVD process at the temperature not exceeding 500 deg.C and later oxidized at the high temperature exceeding 500 deg.C. That is, the silicon dioxide film 7 is vapor deposited at 300 deg.C-400 deg.C and then heat-treated at the oxidizing temperature of 900 deg.C to form another silicon dioxide film 8 on the interface between the silicon dioxide film 7 and polycrystalline silicon, tungsten silicide, source and drain 3, 4, 5 and 6. Through these procedures, any possible abnormal oxidation of silicide film during the high temperature heat treatment exceeding 600 deg.C can be prevented from occurring thus enabling the silicon dioxide to be deposited stably on the silicide film for insulating respective parts of a transistor.