THIN FILM EL ELEMENT
PURPOSE:To reduce the driving voltage and increase the luminous intensity and luminous efficiency by providing an alkaline earth fluoride thin film layer between a monocrystal base and a luminous layer thin film for lattice matching. CONSTITUTION:This EL element is constituted of an Si base 1, a com...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
26.02.1990
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To reduce the driving voltage and increase the luminous intensity and luminous efficiency by providing an alkaline earth fluoride thin film layer between a monocrystal base and a luminous layer thin film for lattice matching. CONSTITUTION:This EL element is constituted of an Si base 1, a compound thin film 2 of CaF2 and SrF2 with the continuously changing composition, a CaS luminous layer 3, an insulating film 4, and a transparent electrode 5. A compound thin film of CaF2 and SrF2 with the continuously changing composition in the film thickness direction and the lattice constant in the range of 5.4Angstrom -5.7Angstrom at the portion in contact with the Si base 1 and the lattice constant in the range of 5.6Angstrom -5.8Angstrom at the portion in contact with the CaS luminous layer 3 is formed on the Si base 1, and the CaS luminous layer 3 is formed on the thin film. Lattice matching can be performed over the wide range of 5.2Angstrom -6.5Angstrom by using the alkaline earth fluoride mixed crystal. The luminous efficiency and luminous intensity can be increased, and the driving voltage can be decreased. |
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Bibliography: | Application Number: JP19880206475 |