PLASMA ETCHING METHOD

PURPOSE:To control a taper angle of an etching shape by performing etching by periodically repeatedly producing and interrupting rf discharge. CONSTITUTION:After a semiconductor substrate 4 is placed on a lower electrode 3, mixture gas such as SF6 and CCl4 is introduced into a chamber 1, and then rf...

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Bibliographic Details
Main Author KOSHIO ATSUSHI
Format Patent
LanguageEnglish
Published 25.12.1990
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To control a taper angle of an etching shape by performing etching by periodically repeatedly producing and interrupting rf discharge. CONSTITUTION:After a semiconductor substrate 4 is placed on a lower electrode 3, mixture gas such as SF6 and CCl4 is introduced into a chamber 1, and then rf power from a rf power supply 7 is applied across the electrodes 2 and 3 and switched on and off periodically. Once the rf power is interrupted after a plasma state formed, residence time of neutral molecules such as SF2, SFCl, SCl2 and the like in the chamber 1 is made longer to be about several times of seconds, while radicals have shorter residence time differing from the neutral molecules but exist at a state where the rf power is interrupted. Accordingly, discharge time can be controlled by the repeated production and interruption of the rf discharge. Hereby, a taper angle of an etching shape can be controlled.
Bibliography:Application Number: JP19890130883