MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To remove the damage to a semiconductor substrate by measuring the contact resistance of an ohmic electrode by a transmission method, and then opening an insulating film being a spacer by anisotropic dry etching without using a first metallic layer being a barrier. CONSTITUTION:A first photo...

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Bibliographic Details
Main Author KOTANI KOICHIRO
Format Patent
LanguageEnglish
Published 21.12.1990
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To remove the damage to a semiconductor substrate by measuring the contact resistance of an ohmic electrode by a transmission method, and then opening an insulating film being a spacer by anisotropic dry etching without using a first metallic layer being a barrier. CONSTITUTION:A first photoresist 2 is applied on a semiconductor substrate 1, and thereon a first metallic layer 3 as an ohmic electrode is formed in specified thickness. Furthermore, an insulating film 4 and a second photoresist 5 are laminated in order by deposition, and the resist 2, the metallic layer 3 on it, the insulating film 4, and the resist 5 are removed by lift-off. Successively, as an insulating film an SiO2 film is formed in the specified thickness, and thereon a second photoresist 5 is applied, and it is opened by the same patterning as the first ohmic electrode. Successively, using the SiO2 film, it is opened by reactive etching, and as a second ohmic electrode, Au is formed in specified thickness, and this is made a second metallic layer 6.
Bibliography:Application Number: JP19890128962