MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Author: SASAKI TAKAE
• Format: Patent
• Language: English
• Published: 06.12.1990
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To obtain a single crystal semiconductor layer which has no twin defect and crystal subgrain boundary and has excellent crystallinity by by a method wherein films which do not transmit a laser beam and compose a required pattern are formed on the single crystal semiconductor layer and then the single crystal semiconductor layer is recrystallized by the laser beams. CONSTITUTION:A high melting point metal film, for instance a tungsten film 13, for forming non-transmitting films is formed on a single crystal silicon layer 11. Then reactive ion etching is applied to the tungsten film 13 to form stripe-shape apertures 14 and tungsten films 15. Then laser beams 16 are applied to the single crystal silicon layer 11 to recrystallize the single crystal layer 11. As a result, crystal subgrain boundaries 17 are produced near the center of the single crystal silicon layer parts below the apertures 14 where recrystallized layers collide with each other. By the recrystallization, twin defects 12 scattered in the single crystal silicon layer 11 can be extinguished.