VAPOR DEPOSITION DEVICE ADOPTING MAGNETRON SPUTTERING

• Main Author: KOTANI KOICHIRO
• Format: Patent
• Language: English
• Published: 26.10.1990
• Edition: 5
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To obtain the vapor deposition device capable of accurately controlling the compsn. of a film of a mixture of plural components over a wide range by fitting plural targets placed opposite to a substrate on which vapor is deposited, electromagnets for generating high magnetic fields in spaces separately contg. the targets and power sources for the electromagnets. CONSTITUTION:A first electromagnet 31 and a second electromagnet 32 for generating high magnetic fields in spaces separately contg. a first target 21 and a second target 22 having different compsns. are arranged. Electric currents are separately supplied from a first power source 41 to the electromagnet 31 and from a second power source 42 to the electromagnet 32. The intensities of magnetic fields applied to the targets 21, 22 are separately controlled and the rates of sputtering of the targets 1, 2 are separately controlled. Accordingly, the compsn. of a film vapor-deposited on a substrate 1 is simply and accurately controlled by changing the ratio between electric currents from the power sources 41, 42.