FORMATION OF RESIST PATTERN

• Main Authors: SHIBATA TAKESHI, NAKASE MAKOTO
• Format: Patent
• Language: English
• Published: 18.10.1990
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE:To enhance a high resolution property and a dry-etching-resistant property by a method wherein, after a pattern has been exposed and a resist composition pattern has been formed, high-energy radiant rays are irradiated and a resist pattern whose surface is covered with a polymer film containing an aromatic ring is formed. CONSTITUTION:A nitrocellulose thin film 2 is formed on the surface of a silicon substrate 1; the thin film 2 is irradiated with an argon fluoride excimer laser beam 4; nitrocellulose in a part irradiated with the laser is decomposed and removed; a pattern 2 of the nitrocellulose thin film is formed. Then, the substrate 1 is irradiated with an electron beam 5 in the air; an active radical 6 which can start addition polymerization is generated on the pattern 2, coupled with oxygen in the air and transformed into a hydroperoxide and a diperoxide which are comparatively stable at room temperature. After that, a styrene monomer gas 7 is introduced and heated; a graft polymerization reaction is caused; a graft polymer film 8 of styrene is formed on the pattern. Since an aromatic ring is introduced in this manner, a dry-ecthing-resistant property is enhanced sharply; when a resist pattern is formed, high resolution can be obtained.