RESIST PATTERN FORMING METHOD

• Main Authors: ITO SHINICHI, NAKASE MAKOTO
• Format: Patent
• Language: English
• Published: 17.10.1990
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE:To form a positive type resist pattern of high accuracy by patternwise exposing a reversal type resist material, heating the resulting resist film, carrying out uniform exposure, silylating only the patternwise unexposed region and selectively removing the unsilylated layer in the patternwise exposed region. CONSTITUTION:An image reversal type resist material is patternwise exposed, the resulting resist film 2 is heated to cross-link the film 2 in the exposed region and the entire surface of the film 2 is irradiated with light 4s whose wavelength is within the photosensitive region of the resist material to carry out uniform exposure. The patternwise unexposed region 6 is then silylated in an atmosphere of a silicon compd. and the resist film as an unsilylated layer in the patternwise exposed region 5 is selectively removed in an atmosphere of oxygen plasma to form a positive type resist pattern. Since patternwise exposure and exposure for silylation are carried out in separate stages, optimum conditions in exposure such as wavelength and irradiation energy can be separately selected, resolution can be improved and the resist pattern of high accuracy can be formed.