MANUFACTURE OF NONLINEAR RESISTANCE ELEMENT

• Main Authors: MOTTE SHUNICHI, YAMAZAKI TSUNEO
• Format: Patent
• Language: English
• Published: 09.10.1990
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE:To remove a short circuit between picture element electrodes, and to suppress the occurrence of a picture element defect and improve the yield by performing a photolithography process twice when the picture element electrode pattern of the nonlinear resistance element is formed. CONSTITUTION:The photolithography of a picture element electrode 2 is performed twice to form a pattern and an unetched part 6 or a short circuit 5 between picture elements due to dust produced in each time photolithography can be suppressed. Further, a pattern (electrode 2') obtained by the 1st photolithography is made preferably larger than a pattern (picture element electrode 2) obtained by the 2nd photolithography for mask matching and the formation of the desired picture element electrode 2. Consequently, the process yield is improved, and the manufacture cost is reduced to obtain the nonlinear resistance element with high reliability.