MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Authors: KAGAWA KEIICHI, SHINOHARA SHOHEI, MIYAJIMA AKIO, MORITA KIYOYUKI, UEHARA TAKASHI
• Format: Patent
• Language: English
• Published: 03.10.1990
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To prevent an element from deteriorating in characteristics by a method wherein a conductive amorphous thin film or an oxide film is deposited on a gate electrode at the implantation of ions for the formation of a gently sloped drain structure. CONSTITUTION:A conductive amorphous thin film or an oxide film 7 which serves as a stopper at the implantation of ions is formed on the whole face of a substrate 1, then an well 3 side is covered with a resist pattern 8, and phosphorus ions are implanted to form an N<-> layer 9. Then, the film 7 is removed, and SiO2 is deposited on the whole surface of the substrate 1, which is anisotropically etched to form a side wall 10 on both the sides of a gate electrode 6. By this method, a gate electrode is protected against channeling caused by the implantation of ions, and a knock-on phenomenon of impurity inside the gate electrode is prevented by the film 7, so that a semiconductor device of this design can be prevented from deteriorating in characteristics.