MANUFACTURE OF SEMICONDUCTOR DEVICE
PURPOSE:To prevent an element from deteriorating in characteristics by a method wherein a conductive amorphous thin film or an oxide film is deposited on a gate electrode at the implantation of ions for the formation of a gently sloped drain structure. CONSTITUTION:A conductive amorphous thin film o...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
03.10.1990
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To prevent an element from deteriorating in characteristics by a method wherein a conductive amorphous thin film or an oxide film is deposited on a gate electrode at the implantation of ions for the formation of a gently sloped drain structure. CONSTITUTION:A conductive amorphous thin film or an oxide film 7 which serves as a stopper at the implantation of ions is formed on the whole face of a substrate 1, then an well 3 side is covered with a resist pattern 8, and phosphorus ions are implanted to form an N<-> layer 9. Then, the film 7 is removed, and SiO2 is deposited on the whole surface of the substrate 1, which is anisotropically etched to form a side wall 10 on both the sides of a gate electrode 6. By this method, a gate electrode is protected against channeling caused by the implantation of ions, and a knock-on phenomenon of impurity inside the gate electrode is prevented by the film 7, so that a semiconductor device of this design can be prevented from deteriorating in characteristics. |
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Bibliography: | Application Number: JP19890069629 |