PRODUCTION OF THIN FILM EL ELEMENT LUMINOUS LAYER

PURPOSE:To obtain a high-quality thin film EL element luminous layer by irradiating a thin film formed on a substrate with an electron beam, monitoring emitted cathode luminescence, and controlling a luminescence center, the concentration of activator, and the amounts of evaporation from respective...

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Bibliographic Details
Main Authors MATSUNO AKIRA, NIRE TAKASHI, TANDA SATOSHI
Format Patent
LanguageEnglish
Published 20.08.1990
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Summary:PURPOSE:To obtain a high-quality thin film EL element luminous layer by irradiating a thin film formed on a substrate with an electron beam, monitoring emitted cathode luminescence, and controlling a luminescence center, the concentration of activator, and the amounts of evaporation from respective evaporation sources. CONSTITUTION:In a vacuum tank 1, for example, Zn, S, and Mn are put into evaporation sources 3, 4, and 5, respectively, and respective evaporation sources 3, 4, 5 are heated independently. On the other hand, a substrate 2 ts heated to 200 deg.C and shutters 6, 7, 8 are opened. At this time, an electron beam is emitted from an electron gun 10 and the substrate 2 is irradiated with this electron beam, and fluorescence is emitted from a ZnS.Mn film formed on the substrate 2. Further, the above fluorescence is spectroscoped by means of a spectroscope 11 and detected by means of an SMA 12, and respective temps. of the evaporation sources 3, 4, 5 are changed by means of the spectrum. By this method, the temps. of respective evaporation sources can be controlled so that the optimum spectrum is reached, and the high-quality EL element luminous layer can be obtained with superior reproducibility.
Bibliography:Application Number: JP19890027668