THIN FILM TRANSISTOR

• Main Authors: IKEGUCHI HIROSHI, HIROI MASAKI, ISHIDA MAMORU, ABE SHUYA, SANO YUTAKA, MORI KOJI
• Format: Patent
• Language: English
• Published: 23.01.1990
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To improve the characteristics of C-MOS TFT by making the interlayer insulating film on an n-channel thicker than that on a p-channel in a thin film transistor which forms n-channel and p-channel transistors on an insulating substrate. CONSTITUTION:A part of an SiO2 film 5 on a gate electrode 4 of a p-channel transistor is simultaneously etched to eliminate and SiO2 film thickness as the insulating film on a p-channel is made thinner fixed thickness than that on an n-channel. Thereafter a BSG layer 8 is applied on the whole surface of the n-channel transistor and the p-channel transistor. Thereafter it is diffused and a source drain region of the n-channel transistor 2' and another source drain region 2'' are formed. An initial film thickness of 1000-3000A is left in the SiO2 film 5 on the n-channel transistor to eliminate a PSG film 6, an NSG film 7 and a BSG film 8. Next an interlayer insulating film 9 composed of SiO2 is made of 4000-12000A thick by an LPCVD method and film thickness on the n-channel and the p-channel is allowed to differ.