SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

PURPOSE:To obtain a field-effect transistor, whose useless region is eliminated and whose integration degree is improved, for high electric power use by a method wherein an opening is formed in a field oxide film at a region held between two pieces of gate electrode and wiring parts using the gate e...

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Bibliographic Details
Main Author AKIBA TOSHIHIKO
Format Patent
LanguageEnglish
Published 08.01.1990
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To obtain a field-effect transistor, whose useless region is eliminated and whose integration degree is improved, for high electric power use by a method wherein an opening is formed in a field oxide film at a region held between two pieces of gate electrode and wiring parts using the gate electrode and wiring parts as masks and a drain is formed in a semiconductor layer to correspond to this opening. CONSTITUTION:An opening 18 is formed in a field oxide film 7 at a region held between two pieces of gate electrode and wiring parts 9 using the gate electrode and wiring parts 9 as masks and a drain 11 is formed in a semiconductor layer 1 in such a way as to correspond to this opening 18. Accordingly, the undesired low-impurity concentration region 7, which is formed between the gate electrode and wiring parts 9 and the drain 11, is annihilated, the width of this region is eliminated and an integration degree is improved. At the same time, the width of the drain 11 is also decreased a little.
Bibliography:Application Number: JP19880142669