FORMING FINE PATTERN

PURPOSE:To improve adhesion between a photo mask and a resist film and improve accuracy of resolution of a resist pattern and accuracy of a resist dimensions by eliminating a swelling part of the resist at the periphery part of the substrate in a substrate where the positive type resist is coated. C...

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Bibliographic Details
Main Author SONEHARA AKIO
Format Patent
LanguageEnglish
Published 18.07.1990
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Summary:PURPOSE:To improve adhesion between a photo mask and a resist film and improve accuracy of resolution of a resist pattern and accuracy of a resist dimensions by eliminating a swelling part of the resist at the periphery part of the substrate in a substrate where the positive type resist is coated. CONSTITUTION:When a resist 3 is coated by the spin coating method, a fringe occurs widely near the edge in the case of the square substrate 1 with a swell at the periphery of a substrate 1. Then, by selectively exposing the protruding part using a photo mask 6, etc., and then developing it layer, a part 4 where the swell is eliminated can be formed. Then, by adhering a photo mask 9 in normal manner and performing exposure by light or ionization radiant rays and then by developing it, a resist pattern 10 can be formed.
Bibliography:Application Number: JP19890003506