THIN FILM TRANSISTOR

• Main Authors: MATSUMOTO TOMOTAKA, MISHIMA YASUYOSHI, KIMURA TADAYUKI, OKI KENICHI
• Format: Patent
• Language: English
• Published: 25.06.1990
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE:To shift threshold value in the positive direction without deteriorating a rising the characteristic by having structure, where a first metal film is opposing to a second metal film connected to a gate insulating film through an interlayer insulating film. CONSTITUTION:A gate electrode G is made of a MIM(metal-insulator-metal) construction, where an interlayer insulating film 5 is interposed between a first metal layer 3 and a second metal layer 4. Then, the gate electrode G is led out outside as an electrode to impress gate voltage on the first metal film 3, while the second metal 4 is made to oppose to an operating semiconductor layer 7 through a a gate insulating film 6. In this constitution, when gate voltage Vc is impressed on the first metal film 3 from outside, the second metal film 4 works as a true gate electrode and this potential becomes true gate voltage VGO. Thereby, threshold value can be shifted in the positive direction without deteriorating a rising characteristic.