MANUFACTURING EQUIPMENT OF SEMICONDUCTOR DEVICE
PURPOSE:To set an optimum period of exposure against the irregularity generating between processes, lots and wafers respectively by a method wherein a detection light is projected on a wafer, an optimum exposure period is computed by detecting the threshold value of the amount of exposure, and the o...
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Main Author | |
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Format | Patent |
Language | English |
Published |
13.06.1990
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To set an optimum period of exposure against the irregularity generating between processes, lots and wafers respectively by a method wherein a detection light is projected on a wafer, an optimum exposure period is computed by detecting the threshold value of the amount of exposure, and the obtained value is fed back to an exposure system. CONSTITUTION:The strength of reflection when a detection light 11 is projected on a photoresist is detected by a photomultiplier 10 of a detection system. An exposure amount threshold value detecting pattern is formed by exposing a pattern 14 on a part of a wafer 5 by changing optical density. At this time, using a reticle blind 12, the exposure is conducted by covering the region other than the pattern 14 where optical density is changed. Using the threshold value of exposure amount determined by the detection system, an optimum exposure period is computed and the result is fed back to the exposure system. Through these procedures, the optimum exposure period against the irregularity between processes, lots and wafers can be set. |
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Bibliography: | Application Number: JP19880308099 |