BARIUM TITANATE SEMICONDUCTOR PORCELAIN MATERIAL

• Main Authors: OHARA KEISHIN, NISHI TETSUYA, KATSUTA NAOKI, NAKAGAMI YASUHIRO, YAMAGUCHI TETSUO
• Format: Patent
• Language: English
• Published: 08.05.1990
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMISTRY; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; CONCRETE; ELECTRICITY; INORGANIC CHEMISTRY; LIME, MAGNESIA; METALLURGY; REFRACTORIES; RESISTORS; SLAG; TREATMENT OF NATURAL STONE

PURPOSE:To enable to lower the specific resistance value of the subject material at the ordinary temperature without affecting the positive resistance temperature coefficient thereof by substituting one part of TiO2 component of the porcelain material containing a semiconductor-forming additive for BaTiO3 with Ti2O3. CONSTITUTION:The barium component of barium carbonate, the titanium component of titanium dioxide and titanium trioxide(Ti2O3) and a semiconductor- forming additive (e.g., a rare metal element, Mn, Sb, SiO2) for barium titanate are mixed, molded and sintered (preferably at 1300-1500 deg.C for 1hr) to form a barium titanate semiconductor porcelain material. The addition of a Sr compound to the magnetic material mixture and also the addition of a Pb compound to the magnetic material mixture permit the transfer of the positive resistance temperature coefficient of the magnetic material to a lower temperature and to a higher temperature, respectively, and the adjustment of the addition amounts of both the components enables to adjust a temperature exhibiting the positive resistance temperature coefficient of the magnetic material.