POSITIVE TYPE PHOTORESIST

PURPOSE:To obtain the positive type photoresist by which desired sectional shapes are formed with high resolving power and which has excellent characteristics by using an alkaline soluble resin and plural kinds of 1, 2- naphthoquinone diazide photosensitive agents. CONSTITUTION:The positive type pho...

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Bibliographic Details
Main Authors KAMEYAMA YASUHIRO, KISHIMURA SHINJI, UOTANI SHIGEO, KINE CHIE, OCHIAI TAMEICHI
Format Patent
LanguageEnglish
Published 23.04.1990
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To obtain the positive type photoresist by which desired sectional shapes are formed with high resolving power and which has excellent characteristics by using an alkaline soluble resin and plural kinds of 1, 2- naphthoquinone diazide photosensitive agents. CONSTITUTION:The positive type photoresist consists essentially of the alkaline soluble resin the quinonediazide photosensitive agent and solvent. The photosensitive agent contains plural kinds of the photosensitive compds. obtd. by partially or completely esterifying the photosensitive base body expressed by formula I with 1, 2-naphthoquinone diazide-5-sulfonic acid or 1, 2-naphthoquinone diazide-4-sulfonic acid. In formula I, m, n denote integers 0 to 4 and m+n=3 to 8. The positive type photoresist which has the high resolving power and the practicably adequate sensitivity and by which the desired sectional shapes are obtd. and the prescribed or higher residual film rate is obtainable in the unexposed part is obtd. in this way.
Bibliography:Application Number: JP19890150854