POSITIVE TYPE PHOTORESIST
PURPOSE:To obtain the positive type photoresist by which desired sectional shapes are formed with high resolving power and which has excellent characteristics by using an alkaline soluble resin and plural kinds of 1, 2- naphthoquinone diazide photosensitive agents. CONSTITUTION:The positive type pho...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
23.04.1990
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To obtain the positive type photoresist by which desired sectional shapes are formed with high resolving power and which has excellent characteristics by using an alkaline soluble resin and plural kinds of 1, 2- naphthoquinone diazide photosensitive agents. CONSTITUTION:The positive type photoresist consists essentially of the alkaline soluble resin the quinonediazide photosensitive agent and solvent. The photosensitive agent contains plural kinds of the photosensitive compds. obtd. by partially or completely esterifying the photosensitive base body expressed by formula I with 1, 2-naphthoquinone diazide-5-sulfonic acid or 1, 2-naphthoquinone diazide-4-sulfonic acid. In formula I, m, n denote integers 0 to 4 and m+n=3 to 8. The positive type photoresist which has the high resolving power and the practicably adequate sensitivity and by which the desired sectional shapes are obtd. and the prescribed or higher residual film rate is obtainable in the unexposed part is obtd. in this way. |
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Bibliography: | Application Number: JP19890150854 |