MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To flatten a boundary between an oxide film and a recrystallized silicon layer by melting a polycrystal silicon layer into a recrystallized silicon layer, forming the upper section into an amorphous silicon layer, and oxidizing the same for making an oxide film. CONSTITUTION:A recrystallized...

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Bibliographic Details
Main Author SASAKI TAKAE
Format Patent
LanguageEnglish
Published 23.04.1990
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To flatten a boundary between an oxide film and a recrystallized silicon layer by melting a polycrystal silicon layer into a recrystallized silicon layer, forming the upper section into an amorphous silicon layer, and oxidizing the same for making an oxide film. CONSTITUTION:A recrystallized silicon layer 6 formed on a base insulation layer 4 on a silicon substrate 2 is melted and recrystallized to form a recrystallized silicon layer 8. Silicon ions and the like are thereafter implanted to the surface of the layer 8 to form an amorphous silicon layer 10, and the oxidation temp. is controlled by thermal processing to oxidize the layer 10. In this way the layer 10 is oxidized with an oxidation rate without being influenced by a crystallization grain boundary or twin boundary existing in the layer, so that an oxide film 12 having the interface with the layer 8 being flat and the thickness being uniform is formed. It is thus possible to form a semiconductor device without deterioration in its electric characteristics.
Bibliography:Application Number: JP19880261944