PATTERN FORMING METHOD AND RESIST APPLYING DEVICE USED THEREIN
PURPOSE:To form a resist with good adhesiveness by applying and forming the resist after one main surface of a base substrate treated in a treating section for imparting a hydrophobic property is treated with a main solvent of the resist in a treating section for applying the resist. CONSTITUTION:A...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
16.04.1990
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To form a resist with good adhesiveness by applying and forming the resist after one main surface of a base substrate treated in a treating section for imparting a hydrophobic property is treated with a main solvent of the resist in a treating section for applying the resist. CONSTITUTION:A wafer to be treated from a loader section 1 is transported by a belt to a tight contact intensifying section 2 where the wafer is treated for a prescribed period of time and HMDS (hexamethyl silazane) is stuck to the main surface part thereof. The wafer is vacuum-recked onto a spin chuck 6 and the inside of a cup 21 is filled with vapor 24 of ECA (ethyl cellosolve acetate) to which the wafer is exposed for a prescribed period of time; in succession, the resist of a positive type is dropped at a prescribed rate from a resist discharge nozzle 7. The substrate after the prescribed treatment is coated with the resist while the substrate is kept in the atmosphere of the main solvent of the resist to be applied thereon in such a manner, by which the patterns are formed and, therefore, the stresses to be generated in the resist is relieved and the adhesive property to the substrate is improved. |
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Bibliography: | Application Number: JP19880257702 |