X-RAY REFLECTOR

PURPOSE:To achieve a higher X-ray reflectance and a broader service wavelength range by arranging one layer containing SiC and the other layer composed of metal material in layer pairs formed by laminating multiple pairs of layers each having an X-ray dispersion characteristic one upon another. CONS...

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Bibliographic Details
Main Author NAKAJIMA KUNIO
Format Patent
LanguageEnglish
Published 13.12.1989
Subjects
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GAMMA RAY OR X-RAY MICROSCOPES
IRRADIATION DEVICES
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
X-RAY TECHNIQUE
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Summary:PURPOSE:To achieve a higher X-ray reflectance and a broader service wavelength range by arranging one layer containing SiC and the other layer composed of metal material in layer pairs formed by laminating multiple pairs of layers each having an X-ray dispersion characteristic one upon another. CONSTITUTION:An SiC layer 1d and a metal layer 1c (containing at least one or more of Ni, Cr, Co, Mo, Pd, Ag, Hf, Ta, W, Re, Ir, Pt and Au) are laminated alternately on a substrate made of glass, silicon or graphite. The manufacture thereof employs a physical vapor deposition by sputtering or chemical vapor deposition (CVD). The size of the layers is controlled by using a shutter or moving the substrate to a material source. The thickness of each layer is controlled by monitoring an X-ray reflectance of a film or a crystal resonator film thickness meter where the vapor deposition is conducted. As a result, a subject X-ray wavelength area can be made 0.1-200Angstrom and an X-ray reflectance be made to 5-80%, thereby reducing scattering and absorption in the interface.
Bibliography:Application Number: JP19880139706