METHOD FOR ETCHING THIN FILM

• Main Author: MOTTE SHUNICHI
• Format: Patent
• Language: English
• Published: 11.12.1989
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

PURPOSE:To suppress damage due to irradiation with ions and to gently slope the pattern edge of a thin film by etching the thin film through a resist as a mask, removing the pattern edge of the resist with oxygen plasma and etching the thin film again. CONSTITUTION:A thin Cr film 2 is laminated on a substrate 1 and a resist 3 is selectively left on the film 2. This film 2 is selectively etched and the pattern edge of the resist 3 is removed with oxygen plasma so that the resist 3 is made to stand back from the pattern edge of the film 2. The film 2 is then etched again to gently slope the pattern edge of the film 2. By this method, the reliability of a TFT device, a semiconductor device, etc., can be improved.