FORMATION OF THIN FILM

PURPOSE:To economically form the thin film of ferroelectric substance without necessitating expensive MgO single crystal by previously forming a base film consisting of MgO on the surface of a base plate while utilizing Mg and O2 as a raw material in case of forming the thin film of ferroelectric su...

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Bibliographic Details
Main Authors MORI EISAKU, INA TERUO
Format Patent
LanguageEnglish
Published 22.11.1989
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Summary:PURPOSE:To economically form the thin film of ferroelectric substance without necessitating expensive MgO single crystal by previously forming a base film consisting of MgO on the surface of a base plate while utilizing Mg and O2 as a raw material in case of forming the thin film of ferroelectric substance such as PbTiO3 on the base plate by a cluster ion beam method. CONSTITUTION:After evacuating the inside of a vacuum tank 11 at high vacuum, gaseous O2 is introduced from a cylinder 22 and successively a crucible 2c containing Mg powder 15 is heated with a heating filament 3c to evaporate Mg. Cluster ions are formed of Mg vapor ejected from the crucible 2c with an ionization filament 8c and accelerated by an acceleration electrode 9c and vapor-deposited on a base plate 16 made of stainless steel and a base film 17 consisting of MgO which is produced on reaction with O2 is formed. Then the crucibles 2a, 2b containing Pb powder 4. Ti powder 5 respectively are heated with the filaments 3a, 3b to generate vapor of Pb, Ti and both Pb cluster ions and Ti cluster ions are produced with the ionization filaments 8a, 8b and accelerated with the acceleration electrodes 9a, 9b and vapor-deposited on the surface of the MgO film 17 and thereafter allowed to react with oxygen, thus, a ferroelectric substance film 7 of PbTiO3 is easily formed.
Bibliography:Application Number: JP19880120935