GATE ARRAY

PURPOSE:To change a design size of a transistor by a method wherein a diffusion part is divided in advance into two or more parts and divided diffusion parts are connected as required. CONSTITUTION:A P<+> diffusion part and an N<+> diffusion part are divided individually into two parts 9...

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Bibliographic Details
Main Author TATEYAMA MASAYOSHI
Format Patent
LanguageEnglish
Published 21.11.1989
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To change a design size of a transistor by a method wherein a diffusion part is divided in advance into two or more parts and divided diffusion parts are connected as required. CONSTITUTION:A P<+> diffusion part and an N<+> diffusion part are divided individually into two parts 9a, 9b and 10a, 10b. In order to electrically separate other adjacent regions, a P-ch transistor using a polysilicon gate 3a as a gate and an N-ch transistor using a polysilicon gate 3b as a gate are turned off. That is, a VDD potential is applied to the polysilicon gate 3a and a GND potential is applied to the polysilicon gate 3b. In the divided diffusion parts 9a, 9b, 10a, 10b, contacts 7 are arranged on them as required and are connected by using an aluminum wiring part 6. By this setup, a channel width of the transistors can be changed and the design size can be modified.
Bibliography:Application Number: JP19880120912