PLASMA TREATMENT APPARATUS

• Main Authors: HANAZAKI MINORU, ODERA HIROKI
• Format: Patent
• Language: English
• Published: 14.11.1989
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To reduce the leakage of a formed plasma in the direction of the wall of a treatment chamber by forming the electric potential of an annular electrode provided around an electrode on which a specimen is placed to a ground potential and also supplying high-frequency electric power to an annular electrode provided around a counter electrode. CONSTITUTION:Annular electrodes 11, 12 are disposed around a lower electrode 2 on which high-frequency electric power is impressed. High-frequency electric power is supplied from a high-frequency electric power source 13 to the annular electrode 12 around an upper electrode 1 in a ground potential, and the electric potential of the annular electrode 12 around the lower electrode 2 to which high-frequency electric power is supplied from a high-frequency electric power source 6 is formed into a ground potential. Glow discharges are initiated between the upper electrode 1 and the annular electrode 12, between the lower electrode 2 and the annular electrode 11, and between the annular electrodes 11, 12, respectively, by which plasma 14a-14d is produced. By the above electrical arrangement, the formed plasma 14a-14b has an effect of preventing the leakage in the direction of the wall of a plasma treatment chamber 4. Accordingly, plasma treatment for a specimen 3, such as etching and thin film formation, can be carried out at high speed.