PLASMA TREATMENT APPARATUS

• Main Authors: YAMAGUCHI YASUHIRO, TOKUDA MITSUO, USUAMI HIROHISA, OTSUBO TORU
• Format: Patent
• Language: English
• Published: 14.11.1989
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To easily connect a plasma production chamber and a cavity resonator into service condition by detachably constituting both in a state where mutual functions are maintained. CONSTITUTION:A plasma production chamber 6 is held in a vacuum atmosphere, where a plasma is generated and maintained. Microwave energy is stored and increased in a cavity resonator 1. The plasma formation chamber 6 and the cavity resonator 1 are detachably constituted in a state where mutual functions are maintained. A slit is provided on the plasma production chamber-side of the cavity resonator, and a member transmitting microwaves and keeping the plasma production chamber in a vacuum state is disposed on the plasma production chamber side of the slit. Further, a second plasma-generating means is provided to the inside of the plasma production chamber. By this method, the plasma production chamber and the cavity resonator can be easily connected into service condition.