PATTERN FORMING METHOD AND RESIST MATERIAL USED THEREFOR

PURPOSE:To enhance the resolving power, plasma etching and heat resistances of a prescribed resist by allowing a pattern of the resist to react with a specified compd. to form a mask. CONSTITUTION:A substrate obtd. by sticking a thin Al film 12 on an Si water 11 is coated with a polymer having OH gr...

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Bibliographic Details
Main Authors HAYASE SHUJI, NAKASE MAKOTO
Format Patent
LanguageEnglish
Published 28.09.1989
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To enhance the resolving power, plasma etching and heat resistances of a prescribed resist by allowing a pattern of the resist to react with a specified compd. to form a mask. CONSTITUTION:A substrate obtd. by sticking a thin Al film 12 on an Si water 11 is coated with a polymer having OH groups, e.g., a compd. represented by formula I as a resist 13 and this resist 13 is exposed and developed to form a pattern. The resist 13 is then allowed to react with an Si compd. having one or more benzene rings to enhance the etching and heat resistances of the resist 13 and the film 12 is patterned, e.g., by plasma etching. The Si compd. is preferably a compd. having Si-N, Si-O or Si-Cl and a compd. represented by formula II may be used as the Si compd.
Bibliography:Application Number: JP19880069786