INSPECTING METHOD FOR STUCK SOI SUBSTRATE

PURPOSE:To inspect the adhesion state of the stuck body of the SPI substrate including a low-resistivity layer effectively by arranging the low-resistivity layer with large emissivity on a stuck surface in isolation from an infrared detecting means. CONSTITUTION:The layer which has small cumulative...

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Bibliographic Details
Main Author ARIMOTO YOSHIHIRO
Format Patent
LanguageEnglish
Published 18.09.1989
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:PURPOSE:To inspect the adhesion state of the stuck body of the SPI substrate including a low-resistivity layer effectively by arranging the low-resistivity layer with large emissivity on a stuck surface in isolation from an infrared detecting means. CONSTITUTION:The layer which has small cumulative transmissivity to infrared rays among elements constituting the stuck body 17 is arranged on the stuck surface 16 in isolation from the infrared detecting means 13. For example, the stuck body 17 consisting of a high-resistance silicon substrate 12 as a base material and a low-resistance silicon substrate 11 to be removed after sticking is heated by a heating means 4 up to about 50 deg.C. Consequently, the substrate 11 generates infrared rays, which are transmitted through other layers relatively easily, but reflected on an incomplete adhesion area 15. Therefore, the quantity of transmitted infrared rays TIR decreases only in an area corresponding to the area 15, which is observed clearly as shown in a figure (a).
Bibliography:Application Number: JP19880057360