THIN FILM FORMATION

• Main Authors: MORI EISAKU, INA TERUO
• Format: Patent
• Language: English
• Published: 05.09.1989
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; COMPOUNDS THEREOF; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; INSULATORS; METALLURGY; NON-METALLIC ELEMENTS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To easily form thin ferroelectric films of various compositions on a substrate by vapor-depositing plural vaporized vapor deposition materials onto a substrate by a cluster ion beam method and then subjecting the resulting thin film to oxidation by heating to convert this film into a thin ferroelectric film. CONSTITUTION:The inside of a vacuum tank 1 is reduced to high vacuum, and a Pb powder 6 and a Ti powder 7 in respective crucibles 2 are heated by means of heating filaments 3 to undergo vaporization, respectively, and are allowed to blow out through respective injection holes, by which respective vapors of Pb and Ti are subjected to adiabatic expansion and condensed in the vicinity of outlets, by which numerous clusters are formed. A part of the resulting clusters is formed into positively charged cluster ions by means of electrons from electron emission filaments 9 in the course of progress toward a substrate 4, accelerated in the substrate 4 direction by means of the electric fields of ion acceleration electrodes 8, and dispersedly vapor- deposited onto the substrate 4 surface, by which a thin mixture film of Pb and Ti is formed. By subjecting this thin mixture film to heat treatment at about 500-900 deg.C by means of a heating furnace, this film can be converted into a thin PbTiO3 film having a perovskite structure.