FORMATION OF PATTERN

• Main Authors: IWATATE KAZUMI, MATSUDA KOREHITO
• Format: Patent
• Language: English
• Published: 28.08.1989
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To obtain an accurate pattern by conducting n-times of multiple irradiation of an electron beam with the dose of 1/n of a desired total dose to a pattern forming region, and sufficiently lengthening the radiation period in this case as compared with a noise period to be superposed on the electron beam current. CONSTITUTION:An electron beam is radiated in a desired radiation amount to a desired position on a resist which sensitively responds to the electron beam thereby to form a latent image of predetermined storage energy, i.e., pattern in the resist, and a resist pattern is formed by developing on a substrate. Thus, when the pattern is formed, the beam is scanned from a beam scan starting position Ps to its finishing position Pe by dividing the scanning into n times so that the total sum of the beam radiation amount after it is scanned n times coincides with the desired radiation amount. Thus, the variation in the radiation amount due to noise is reduced to 1n<0.5> times by the n-times of multiplex radiations. Thus, when the n is increased more, the storage energy distribution of the pattern region is uniformized, and a pattern of a high dimensional accuracy is obtained after a development.