SYMMETRIC TYPE ZNO VARISTOR AND MANUFACTURE THEREOF

• Main Authors: YANO YOSHIHIKO, MOROOKA HISAO, FURUBAYASHI MAKOTO
• Format: Patent
• Language: English
• Published: 11.08.1989
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; RESISTORS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To facilitate manufacturing, by forming a ZnO layer on a substrate or a conducting substrate, forming, on the ZnO layer, a metal oxide layer forming an electric potential barrier against the ZnO layer, and forming, on the metal oxide layer, both electrodes at a constant interval. CONSTITUTION:On a substrate 11, a ZnO layer 13 is formed, on which a metal oxide layer 14 forming an electric barrier against the ZnO layer is formed. On the metal oxide layer 14, both electrodes 12, 16 are formed at constant intervals. That is, the one side electrode 12 is formed not on the substrate 11 but on the metal oxide layer 14, and its upper part is always exposed. The electrodes 12, 16 are arranged not vertically but in parallel. The ZnO layer is constituted in a two-layer structure which is satisfied by one layer. Therefore it is not necessary to form partially the ZnO layer 13 by etching or using a mask. A mask is unnecessary to form the metal oxide layer 14. The electrode 12, 16 can be formed by the same process. Thereby manufacturing is enabled without passing complicated process.