SEMICONDUCTOR DEVICE

PURPOSE:To reduce adverse effect to peripheral circuits on the same chip, which is caused by the leakage of an AC signal into a P-type Si substrate, by a method wherein a first n<+> diffused layer, which is connected to a grounding terminal, is provided in the surface of part of an n-type Si e...

Full description

Saved in:
Bibliographic Details
Main Authors SHIMAZU TAKAYUKI, KAMATANI YASUHIRO, MIZUTANI SHIRO
Format Patent
LanguageEnglish
Published 09.08.1989
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE:To reduce adverse effect to peripheral circuits on the same chip, which is caused by the leakage of an AC signal into a P-type Si substrate, by a method wherein a first n<+> diffused layer, which is connected to a grounding terminal, is provided in the surface of part of an n-type Si epitaxial layer. CONSTITUTION:An electrode 8 provided in such a way as to come into contact to an n<+> diffused layer 7 formed in the surface of part of an n-type Si epitaxial layer 2 is connected to a grounding terminal 9. A semiconductor junction capacitor, which is needed, is formed between a P-type diffused layer 3 and an n-type diffused layer 4 and an unintended junction capacitor is formed between the layers 3 and 2 as well. However, as the layer 2 is earthed by the layer 7, the electrode 8 and the terminal 9, an AC signal leaked in the layer 2 through the junction capacitor, which is formed between the layers 3 and 2, out of AC signals to pass through between the layers 3 and 4 does not flow through a P-type Si substrate 1 by the so-called shielding effect.
Bibliography:Application Number: JP19880024255