IC ELEMENT HAVING BUMP STRUCTURE AND ITS MANUFACTURE

PURPOSE:To enhance reliability by a structure wherein, in an IC element having a bump structure, the top part of a bump is exposed and other parts are covered with a protective film. CONSTITUTION:A diffusion treatment is executed as a P-type diffusion layer 21 and an N-type diffusion layer 22; an Si...

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Bibliographic Details
Main Authors TANAKA SEIETSU, USHIDA YOICHI
Format Patent
LanguageEnglish
Published 28.06.1989
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To enhance reliability by a structure wherein, in an IC element having a bump structure, the top part of a bump is exposed and other parts are covered with a protective film. CONSTITUTION:A diffusion treatment is executed as a P-type diffusion layer 21 and an N-type diffusion layer 22; an SiO2 film 23 is formed simultaneously. In addition, a treatment of a protective film such as a PSG film 25, a nitride film or the like is executed; a metal layer 26 is formed; a bump 27 is formed on the metal layer 26. Then, a protective film 28 composed of, e.g., an epoxy resin is formed on a wafer whose bump is treated. In addition, the wafer as it is chucked; it is sucked to a table by means of a vacuum in such a way that the bump becomes the surface; a table corresponding to a table of a drilling machine is used as a chucking table of the wafer; a grinding wheel is set on the side where a drill is attached and is turned; a metal face 29 on the top part of the bump is exposed. Because cutting chips or the like are apt to be produced on the assembly treated in the above manner; therefore this assembly is washed cleanly and is dried.
Bibliography:Application Number: JP19870321370