SEMICONDUCTOR MATERIAL, ITS PRODUCTION, AND ELECTROPHOTOGRAPHIC SENSITIVE MATERIAL
PURPOSE:To increase the sensitivity of an electrophotographic sensitive body in a near infrared wavelength region by using particles consisting of nonmetallophthalocyanine and metallophthalocyanine. CONSTITUTION:The title semiconductor material comprises composite particles (A) consisting of nonmeta...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
28.06.1989
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To increase the sensitivity of an electrophotographic sensitive body in a near infrared wavelength region by using particles consisting of nonmetallophthalocyanine and metallophthalocyanine. CONSTITUTION:The title semiconductor material comprises composite particles (A) consisting of nonmetallophthalocyanine (a) and metallophthalocyanine (b). Preferably, the particle (A) comprises crystals of the component (a) and the component (b), and can be obtd. by allowing the component (a) to contact with a metal or a metal compd. in a stage of the transition of the crystal form of (a). Further, the particle (A) is pref. one having the component (b) formed on the surface of a particle of the component (a). The particle (A) can be formed by allowing the component (a) to contact with particles of a metal or a metal compd. forming the component (b) by orienting a central metal atom on the surface of the particle of (a). Furthermore, it is pref. that the particle (A) is used as a photosensitive body as a charge generating agent. |
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Bibliography: | Application Number: JP19880023155 |