MANUFACTURE OF SEMICONDUCTOR SUBSTRATE
PURPOSE:To contrive the improvement in the surface characteristics of a semiconductor surface by a method wherein the second semiconductor substrate and the oxide semiconductor layer on the first semiconductor substrate are adhered and formed in one body, and the auto-doped layer formed between the...
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Format | Patent |
Language | English |
Published |
08.05.1989
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Subjects | |
Online Access | Get full text |
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Abstract | PURPOSE:To contrive the improvement in the surface characteristics of a semiconductor surface by a method wherein the second semiconductor substrate and the oxide semiconductor layer on the first semiconductor substrate are adhered and formed in one body, and the auto-doped layer formed between the first semiconductor substrate and the oxide semiconductor layer is removed by chemical and mechanical polishing and etching. CONSTITUTION:A single semiconductor layer 5 is formed on the first semiconductor substrate 1, an oxide semiconductor layer 3 is formed on the single crystal semiconductor layer 5, the oxide semiconductor layer 3 is heated up while it is brought into contact with the second semiconductor substrate 2 consisting of Si or SiC, and the second semiconductor substrate 2 and the oxide semiconductor layer 3 are adhered with each other and integrally formed. Then, the greater part of the thickness of the first semiconductor substrate 1 is removed by chemical and mechanical polishing, the remaining part of the thickness of the first semiconductor substrate 1 is removed by selective etching, and the auto-doped layer 11 unavoidably formed between the first semiconductor substrate 1 and the oxide semiconductor layer 3 is removed by non-selective etching. As a result, the surface characteristics of the semiconductor surface can be improved. |
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AbstractList | PURPOSE:To contrive the improvement in the surface characteristics of a semiconductor surface by a method wherein the second semiconductor substrate and the oxide semiconductor layer on the first semiconductor substrate are adhered and formed in one body, and the auto-doped layer formed between the first semiconductor substrate and the oxide semiconductor layer is removed by chemical and mechanical polishing and etching. CONSTITUTION:A single semiconductor layer 5 is formed on the first semiconductor substrate 1, an oxide semiconductor layer 3 is formed on the single crystal semiconductor layer 5, the oxide semiconductor layer 3 is heated up while it is brought into contact with the second semiconductor substrate 2 consisting of Si or SiC, and the second semiconductor substrate 2 and the oxide semiconductor layer 3 are adhered with each other and integrally formed. Then, the greater part of the thickness of the first semiconductor substrate 1 is removed by chemical and mechanical polishing, the remaining part of the thickness of the first semiconductor substrate 1 is removed by selective etching, and the auto-doped layer 11 unavoidably formed between the first semiconductor substrate 1 and the oxide semiconductor layer 3 is removed by non-selective etching. As a result, the surface characteristics of the semiconductor surface can be improved. |
Author | ARIMOTO YOSHIHIRO |
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Notes | Application Number: JP19870271937 |
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PublicationYear | 1989 |
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Snippet | PURPOSE:To contrive the improvement in the surface characteristics of a semiconductor surface by a method wherein the second semiconductor substrate and the... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | MANUFACTURE OF SEMICONDUCTOR SUBSTRATE |
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