MANUFACTURE OF SEMICONDUCTOR SUBSTRATE

• Main Author: ARIMOTO YOSHIHIRO
• Format: Patent
• Language: English
• Published: 08.05.1989
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To contrive the improvement in the surface characteristics of a semiconductor surface by a method wherein the second semiconductor substrate and the oxide semiconductor layer on the first semiconductor substrate are adhered and formed in one body, and the auto-doped layer formed between the first semiconductor substrate and the oxide semiconductor layer is removed by chemical and mechanical polishing and etching. CONSTITUTION:A single semiconductor layer 5 is formed on the first semiconductor substrate 1, an oxide semiconductor layer 3 is formed on the single crystal semiconductor layer 5, the oxide semiconductor layer 3 is heated up while it is brought into contact with the second semiconductor substrate 2 consisting of Si or SiC, and the second semiconductor substrate 2 and the oxide semiconductor layer 3 are adhered with each other and integrally formed. Then, the greater part of the thickness of the first semiconductor substrate 1 is removed by chemical and mechanical polishing, the remaining part of the thickness of the first semiconductor substrate 1 is removed by selective etching, and the auto-doped layer 11 unavoidably formed between the first semiconductor substrate 1 and the oxide semiconductor layer 3 is removed by non-selective etching. As a result, the surface characteristics of the semiconductor surface can be improved.