多結晶シリコンチャンクおよびその製造方法

• Format: Patent
• Language: Japanese
• Published: 22.07.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; ALLOYS; APPARATUS THEREFOR; CHEMISTRY; COMPOUNDS THEREOF; CRUSHING, PULVERISING, OR DISINTEGRATING; CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; CRYSTAL GROWTH; FERROUS OR NON-FERROUS ALLOYS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INORGANIC CHEMISTRY; METALLURGY; MILLING GRAIN; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PREPARATORY TREATMENT OF GRAIN FOR MILLING; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TRANSPORTING; TREATMENT OF ALLOYS OR NON-FERROUS METALS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL