SEMICONDUCTOR LIGHT-EMITTING ELEMENT

• Main Authors: KASHIWAGI HIROYUKI, KAWAKAMI YASUYUKI, IDE TOSHIYA
• Format: Patent
• Language: English; Japanese
• Published: 27.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor light-emitting element capable of increasing intensity of emitted light having a narrow angular light distribution.SOLUTION: It comprises: a translucent portion including a translucent substrate having a periodic concavo-convex structure on a top surface; a semiconductor structural layer having a first semiconductor layer having a first conductivity type formed on the top surface of a translucent substrate to embed the concavo-convex structure, a light emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light emitting layer and having a second conductivity type opposite the first conductivity type; a first electrode formed on the second semiconductor layer and having light reflectivity; and a second electrode formed on the first semiconductor layer, and the translucent portion has a thickness less than or equal to an incoherent distance of light emitted from the light emitting layer.SELECTED DRAWING: Figure 2 【課題】狭角な配光を有する出射光の強度を増加させることが可能な半導体発光素子を提供する。【解決手段】上面に周期的な凹凸構造を有する透光性基板を含む透光部と、透光性基板の上面に前記凹凸構造を埋め込むように形成された第１の導電型を有する第１の半導体層、第１の半導体層上に形成された発光層、及び発光層上に形成されかつ第１の導電型と反対の第２の導電型を有する第２の半導体層を有する半導体構造層と、第２の半導体層上に形成されかつ光反射性を有する第１の電極と、第１の半導体層上に形成された第２の電極と、を有し、透光部は、発光層から放出される光の可干渉距離以下の厚みを有する。【選択図】図２