METHOD FOR MANUFACTURING TREATED SUBSTRATE, METHOD FOR TREATING SUBSTRATE, METHOD FOR FORMING PATTERN, AND CLEANING LIQUID

• Main Authors: TAJIMA KAZUYA, INOMATA KOYA, TANAKA DAICHI
• Format: Patent
• Language: English; Japanese
• Published: 03.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a method for manufacturing a treated substrate capable of removing a surplus surface modifier by cleaning a substrate exposed to a surface modifier to obtain the treated substrate having the surface modifier formed controlled in surface and height directions, a method for treating a substrate, a method for forming a pattern, and a cleaning liquid.SOLUTION: A method for manufacturing a treated substrate having at least a partial area modified comprises the steps of: exposing the surface of a substrate 10 to a surface modifier containing a compound (A) 20 having bondability to the substrate 10; and cleaning the exposed substrate 10 with a cleaning liquid to obtain a treated substrate 100 including a compound (A) 20 deposited controlled in the surface and height directions of the substrate 10. The cleaning liquid is selected and used so that a distance Ra between Hansen solubility parameter of the compound (A) 20 and Hansen solubility parameter of the cleaning liquid has a relationship of (Ra)2≤128.SELECTED DRAWING: Figure 2 【課題】表面改質剤に曝露した基板を洗浄することにより、余剰な表面改質剤を除去でき、表面改質剤が面方向及び高さ方向に制御されて成膜した処理基板を得ることができる処理基板の製造方法、基板の処理方法、パターン形成方法及び洗浄液を提供する。【解決手段】本発明は、少なくとも一部の領域が改質した表面を有する処理基板の製造方法であって、基板１０に対して結合性を有する化合物（Ａ）２０を含有する表面改質剤に、基板１０の表面を曝露する工程と、曝露の後の基板１０を、洗浄液により洗浄して、化合物（Ａ）２０が基板１０の面方向及び高さ方向に制御されて成膜した処理基板１００を得る工程と、を含む製造方法を採用する。化合物（Ａ）２０のハンセン溶解度パラメータと、洗浄液のハンセン溶解度パラメータとの間の距離Ｒａが、（Ｒａ）２≦１２８の関係となる洗浄液を選択して用いることを特徴とする。【選択図】図２