PLASMA PROCESSING APPARATUS AND METHOD FOR CONTROLLING SOURCE FREQUENCY OF SOURCE HIGH-FREQUENCY POWER

• Main Authors: TAMAMUSHI GEN, MATSUYAMA SHOICHIRO, KOSHIMIZU CHISHIO, INOUE MASAHIRO
• Format: Patent
• Language: English; Japanese
• Published: 31.05.2024
• Subjects: ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS

To provide a technique of reducing a level of reflection of a source high-frequency power in a plasma processing apparatus.SOLUTION: A plasma processing apparatus comprises: a chamber; a substrate support part; a high-frequency power supply; and a bias power supply control part. The high-frequency power supply generates source high-frequency power for generating plasma in the chamber. The bias power supply periodically applies a bias energy having a waveform period to the bias electrode of the substrate supporting part. The high-frequency power supply adjusts a source frequency of the source high-frequency power in an nth phase period in an mth waveform period of the plurality of waveform periods in accordance with a change level of the reflection of the source high-frequency power. The change in level of the reflection is specified by using source frequencies different from each other in the nth phase period in two or more periods before the mth waveform period.SELECTED DRAWING: Figure 2 【課題】プラズマ処理装置においてソース高周波電力の反射の度合いを低減する技術を提供する。【解決手段】開示されるプラズマ処理装置は、チャンバ、基板支持部、高周波電源、及びバイアス電源制御部を備える。高周波電源は、チャンバ内でプラズマを生成するためにソース高周波電力を発生する。バイアス電源は、波形周期を有するバイアスエネルギーを基板支持部のバイアス電極に周期的に与える。高周波電源は、複数の波形周期のうちｍ番目の波形周期内のｎ番目の位相期間におけるソース高周波電力のソース周波数を、ソース高周波電力の反射の度合いの変化に応じて、調整する。反射の度合いの変化は、ｍ番目の波形周期の前の二つ以上の周期それぞれにおけるｎ番目の位相期間において互いに異なるソース周波数を用いることにより特定される。【選択図】図２