SUBSTRATE PROCESSING METHOD, PLASMA PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM

• Main Authors: OUCHI KENJI, INATOMI YUICHIRO, MATSUBARA YOSHIHISA, KIKUCHI YUKI
• Format: Patent
• Language: English; Japanese
• Published: 29.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TRANSPORTING; WELDING; WORKING BY LASER BEAM

To provide a substrate processing method, a plasma processing apparatus, and a substrate processing system that suppress defects in bonding substrates having a conductive layer containing Cu and an insulating layer.SOLUTION: A substrate processing method comprises the steps of: exposing a substrate having a conductive layer containing Cu and an insulating layer to a plasma of a first process gas to activate the surface of the substrate; exposing the substrate, after the process of activating the surface of the substrate, to a plasma of a second process gas to form an oxidation inhibiting layer to inhibit oxidation of Cu on the surface of the conductive layer; forming a hydroxyl group on the surface of the substrate after the process of forming the oxidation inhibiting layer by supplying water to the surface of the substrate; bonding one substrate after the process of forming the hydroxyl group and another substrate after the process of forming the hydroxyl group, and heat treating the bonded substrates.SELECTED DRAWING: Figure 1 【課題】Ｃｕを含む導電層及び絶縁層を有する基板を接合する際の不良を抑制する基板処理方法、プラズマ処理装置及び基板処理システムを提供する。【解決手段】Ｃｕを含む導電層及び絶縁層を有する基板を、第１の処理ガスのプラズマにさらして、前記基板の表面を活性化する工程と、前記基板の表面を活性化する工程後の前記基板を、第２の処理ガスのプラズマにさらして、前記導電層の表面に前記Ｃｕの酸化を抑制する酸化抑制層を形成する工程と、前記酸化抑制層を形成する工程後の前記基板の表面に水を供給して、前記基板の表面に水酸基を形成する工程と、前記水酸基を形成する工程後の一の基板と、前記水酸基を形成する工程後の他の基板とを接合する工程と、接合された前記基板を熱処理する工程と、を有する基板処理方法。【選択図】図１