GROUP III NITRIDE SUBSTRATE

• Main Authors: IMANISHI MASAYUKI, KITAMOTO AKIRA, TAKINO JUNICHI, OKAYAMA YOSHIHISA, SUMI TOMOAKI, YOSHIMURA MASASHI, MORI YUSUKE
• Format: Patent
• Language: English; Japanese
• Published: 28.05.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a group III nitride substrate having low dislocation and low resistance, while attaining a high carrier concentration.SOLUTION: A group III nitride substrate has a first region for showing a first impurity concentration, and a second region for showing a second impurity concentration lower than the first impurity concentration, in a polished surface, and a first dislocation density in the first region is lower than a second dislocation density in the second region.SELECTED DRAWING: Figure 4 【課題】高いキャリア濃度を達成しながら、低転位及び低抵抗のＩＩＩ族窒化物基板を提供する。【解決手段】ＩＩＩ族窒化物基板は、研磨された面内において、第１不純物濃度を示す第１領域と、第１不純物濃度よりも低い第２不純物濃度を示す第２領域と、を有し、第１領域の第１転位密度は、第２領域の第２転位密度よりも低い。【選択図】図４