SEMICONDUCTOR DEVICE

• Main Authors: KARIKI HIRO, NISHIWAKI TATSUYA, IIJIMA RYOSUKE, TAKAO KAZUTO, KURAGUCHI MASAHIKO, SHIMIZU TATSUO, KOBAYASHI YUSUKE, IGUCHI TOMOAKI
• Format: Patent
• Language: English; Japanese
• Published: 21.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device whose characteristic can be improved.SOLUTION: According to one embodiment, a semiconductor device includes a first conductive part, a second conductive part, a first semiconductor region, a third conductive part, and a first insulating part. A direction from the first conductive part to the second conductive part is along a first direction. The first semiconductor region has a first conductivity type. The first semiconductor region includes a first subregion, a second subregion, and a third subregion. A second direction from the first subregion to the second subregion intersects with the first direction. The third subregion exists between the first subregion region and the second conductive part in the first direction. The third subregion includes an opposite surface facing the second conductive part. The third subregion and the second conductive part are in Schottky contact. A direction from the opposite surface to the third conductive part is along the second direction. The first insulating part includes a first insulating region. At least a part of the first insulating region exists between the opposite surface and the third conductive part.SELECTED DRAWING: Figure 1 【課題】特性を向上できる半導体装置を提供する。【解決手段】実施形態によれば、半導体装置は、第１導電部と、第２導電部と、第１半導体領域と、第３導電部と、第１絶縁部と、を含む。第１導電部から第２導電部への方向は、第１方向に沿う。第１半導体領域は、第１導電形である。第１半導体領域は、第１部分領域、第２部分領域及び第３部分領域を含む。第１部分領域から第２部分領域への第２方向は、第１方向と交差する。第３部分領域は第１方向において第１部分領域と第２導電部と、の間にある。第３部分領域は第２導電部と対向する対向面を含む。第３部分領域と第２導電部はショットキー接触する。対向面から第３導電部への方向は、第２方向に沿う。第１絶縁部は、第１絶縁領域を含む。第１絶縁領域の少なくとも一部は、対向面と第３導電部と、の間にある。【選択図】図１