PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

To provide a phase change memory device and a method for fabricating the same.SOLUTION: A phase change memory may be provided that includes an electrode, a first layer located on the electrode, and a second layer located on the first layer, where the first layer includes a locally formed phase chang...

Full description

Saved in:
Bibliographic Details
Main Authors CHOI SHINHYUN, HONG SEOK MAN, PARK SEE-ON
Format Patent
LanguageEnglish
Japanese
Published 15.05.2024
Subjects
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:To provide a phase change memory device and a method for fabricating the same.SOLUTION: A phase change memory may be provided that includes an electrode, a first layer located on the electrode, and a second layer located on the first layer, where the first layer includes a locally formed phase change material region.SELECTED DRAWING: Figure 2A 【課題】相変化メモリ装置及びその製造方法を提供する。【解決手段】電極、電極上に位置する第１レイヤ、及び第１レイヤ上に位置する第２レイヤを含み、第１レイヤは、局所的に形成された相変化物質領域を含む相変化メモリを提供しうる。【選択図】図２Ａ
Bibliography:Application Number: JP20230183671