SEMICONDUCTOR DEVICE
To provide a semiconductor device capable of preventing yield deterioration caused by electrostatic breakdown.SOLUTION: A semiconductor device comprises a scan line drive circuit which supplies a signal for selecting a plurality of pixels to a scan line and has a shift register for creating the abov...
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Main Authors | , , , |
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Format | Patent |
Language | English Japanese |
Published |
10.05.2024
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a semiconductor device capable of preventing yield deterioration caused by electrostatic breakdown.SOLUTION: A semiconductor device comprises a scan line drive circuit which supplies a signal for selecting a plurality of pixels to a scan line and has a shift register for creating the above-described signal. In the shift register, one conductive film functioning as gate electrodes of a plurality of transistors is divided into a plurality of conductive films, and the conductive films are electrically connected by a conductive film formed in a layer different from a layer of the divided conductive films. The plurality of transistors include a transistor on an output side of the shift transistor.SELECTED DRAWING: Figure 1
【課題】静電破壊による歩留まりの低下を防ぐことができる半導体装置。【解決手段】複数の画素を選択するための信号を走査線に供給する走査線駆動回路が、上記信号を生成するシフトレジスタを有しており、上記シフトレジスタにおいて、複数のトランジスタのゲート電極として機能する一の導電膜を複数に分割し、上記分割された導電膜どうしを、分割された導電膜と異なる層に形成された導電膜により、電気的に接続する構成を有する。上記複数のトランジスタには、シフトレジスタの出力側のトランジスタが含まれるものとする。【選択図】図1 |
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Bibliography: | Application Number: JP20240014035 |