METHOD FOR PRODUCING RESIN FILM AND METHOD FOR PRODUCING METAL-CLAD LAMINATE
To provide a resin film capable of handling high frequencies of electronic equipment by further improving dielectric characteristics of the resin film made of polyimide as a raw material.SOLUTION: A method for producing a resin film having at least one crystalline silica-containing polyimide layer c...
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Main Authors | , , |
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Format | Patent |
Language | English Japanese |
Published |
08.05.2024
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a resin film capable of handling high frequencies of electronic equipment by further improving dielectric characteristics of the resin film made of polyimide as a raw material.SOLUTION: A method for producing a resin film having at least one crystalline silica-containing polyimide layer containing a solid content of an organic compound containing polyimide, and crystalline silica particles, comprises: directly or indirectly coating a resin composition containing polyamide acid which is a precursor of polyimide and crystalline silica particles on a supporting substrate to laminate a coated film; and heating the coated film to form the polyamide acid into an imide to form a crystalline silica-containing polyimide layer. The crystalline silica particles have, as the whole crystalline silica particles, a ratio of a total area of peaks derived from a cristobalite crystalline phase and a quartz crystalline phase based on a whole peak area derived from SiO2 within the range of 2θ=10° to 90° of the X-ray diffraction analysis spectrum due to CuKα ray of 20 wt.% or more.SELECTED DRAWING: None
【課題】 ポリイミドを原料とする樹脂フィルムの誘電特性をさらに改善することによって、電子機器の高周波化への対応が可能な樹脂フィルムを提供する。【解決手段】 ポリイミドを含有する有機化合物の固形分と、結晶性シリカ粒子と、を含有する結晶性シリカ含有ポリイミド層を少なくとも1層を有する樹脂フィルムの製造方法であり、ポリイミドの前駆体であるポリアミド酸と、結晶性シリカ粒子と、を含有する樹脂組成物を支持基材上に直接又は間接的に塗布して塗布膜を積層する工程、及び、塗布膜に対して熱処理を行って、ポリアミド酸をイミドして結晶性シリカ含有ポリイミド層を形成する工程、を備える。結晶性シリカ粒子は、結晶性シリカ粒子全体として、CuKα線によるX線回折分析スペクトルの2θ=10°~90°の範囲におけるSiO2に由来する全ピーク面積に対するクリストバライト結晶相及びクオーツ結晶相に由来するピークの合計面積の割合が20重量%以上である。【選択図】なし |
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Bibliography: | Application Number: JP20240028502 |