PHOTODETECTOR AND INFRARED IMAGING DEVICE

To provide a photodetector and an infrared imaging device capable of reducing a peripheral component of a dark current.SOLUTION: A light receiving element includes a light-receiving layer including a superlattice of an InAs layer and a GaSb layer, and an amorphous layer covering a side wall surface...

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Bibliographic Details
Main Authors TSUNODA KOJI, OZAKI KAZUO
Format Patent
LanguageEnglish
Japanese
Published 07.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a photodetector and an infrared imaging device capable of reducing a peripheral component of a dark current.SOLUTION: A light receiving element includes a light-receiving layer including a superlattice of an InAs layer and a GaSb layer, and an amorphous layer covering a side wall surface of the light-receiving layer, and the amorphous layer contains In and As, an amount of Ga and an amount of Sb contained in the amorphous layer are smaller than the amount of In and the amount of As contained in the amorphous layer.SELECTED DRAWING: Figure 1 【課題】暗電流の周辺成分を低減することができる受光素子及び赤外線撮像装置を提供する。【解決手段】受光素子は、ＩｎＡｓ層及びＧａＳｂ層の超格子を含む受光層と、前記受光層の側壁面を覆うアモルファス層と、を有し、前記アモルファス層は、Ｉｎ及びＡｓを含み、前記アモルファス層に含まれるＧａの量及びＳｂの量は、前記アモルファス層に含まれるＩｎの量及びＡｓの量よりも少ない。【選択図】図１
Bibliography:Application Number: JP20220168344