SEMICONDUCTOR LAYER STRUCTURE INSPECTION METHOD AND SEMICONDUCTOR LAYER STRUCTURE INSPECTION DEVICE

• Main Authors: TAKEUCHI YOHEI, TAMEMOTO HIROAKI, UEDA TAKUSHI
• Format: Patent
• Language: English; Japanese
• Published: 01.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

To provide a semiconductor layer structure inspection method and a semiconductor layer structure inspection device based on irradiation of light, with which inspection can be efficiently carried out, and inspection quality is high.SOLUTION: Provided is an inspection method for determining the acceptability of a semiconductor layer structure which has a plurality of light emission parts including a light emission layer. The inspection method includes: a primary determination step for irradiating, at a first intensity of irradiation, the semiconductor layer structure with first inspection light of a shorter wavelength than the light emitted by the light emission layer and primarily determining the acceptability of the light emission parts on the basis of a fluorescent image of the semiconductor layer structure acquired by irradiation of the first inspection light; a secondary determination step for irradiating, at a second intensity of irradiation lower than the first intensity of irradiation, the semiconductor layer structure with second inspection light of a shorter wavelength than the light emitted by the light emission layer and secondarily determining the acceptability of the light emission parts on the basis of a fluorescent image of the semiconductor layer structure acquired by irradiation of the second inspection light; and a tertiary determination step for determining the acceptability of each of the light emission parts on the basis of the primary and secondary determinations.SELECTED DRAWING: Figure 1 【課題】検査が効率よくでき、かつ検査品質の高い、光の照射による半導体層構造の検査方法及び半導体層構造の検査装置を提供する。【解決手段】発光層を含む発光部を複数備える半導体層構造の良否を判定する検査方法であって、発光層が発光する光よりも短波長の第１の検査光を第１照射強度で前記半導体層構造に照射して第１の検査光の照射によって取得される半導体層構造の蛍光画像に基づいて発光部の良否を１次判定する１次判定ステップと、発光層が発光する光よりも短波長の第２の検査光を、第１照射強度より低い第２照射強度で半導体層構造に照射して、第２の検査光の照射によって取得される半導体層構造の蛍光画像に基づいて発光部の良否を２次判定する２次判定ステップと、１次判定と２次判定とに基づいて各発光部の良否を判定する３次判定ステップと、を含む。【選択図】図１