NITRIDE SEMICONDUCTOR DEVICE

• Main Author: KITO TAKUYA
• Format: Patent
• Language: English; Japanese
• Published: 01.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a nitride semiconductor device with reduced Ron*Qg.SOLUTION: A nitride semiconductor device 10 includes: an electron transit layer 16; an electron supply layer 18; a gate layer 22 formed of a nitride semiconductor provided on the electron supply layer 18 and containing acceptor impurities; a gate electrode 24 provided on the gate layer 22; and source electrode 28 and a drain electrode 30 provided on the electron supply layer 18. The gate layer 22 includes first and second gate portions 32, 34 separated from each other separated with a recessed portion 36 interposed therebetween, and a step portion 38 having a thickness thinner than the first and second gate portions 32, 34 and defining a recessed portion 36 between the first and second gate portions 32, 34. The gate electrode 24 includes a first gate electrode portion 52 provided on the first gate portion 32, and a second gate electrode portion 54 provided on the second gate portion 34.SELECTED DRAWING: Figure 1 【課題】Ｒｏｎ・Ｑｇを低減した窒化物半導体装置を提供すること。【解決手段】窒化物半導体装置１０は、電子走行層１６と、電子供給層１８と、電子供給層１８上に設けられアクセプタ型不純物を含む窒化物半導体によって構成されたゲート層２２と、ゲート層２２上に設けられたゲート電極２４と、電子供給層１８上に設けられたソース電極２８およびドレイン電極３０とを備える。ゲート層２２は、凹部３６を隔てて互いに離間した第１および第２ゲート部３２，３４と、第１および第２ゲート部３２，３４よりも薄い厚さを有し、第１および第２ゲート部３２，３４間の凹部３６を画定するステップ部３８とを含む。ゲート電極２４は、第１ゲート部３２上に設けられた第１ゲート電極部５２と、第２ゲート部３４上に設けられた第２ゲート電極部５４とを含む。【選択図】図１