VAPOR DEPOSITION MASK

• Main Authors: TAMARU HIROHITO, ISHIKAWA KIICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 12.04.2024
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a vapor deposition mask including an escape recessed part on the lower surface of a frame body and capable of appropriately closely contacting a pattern formation area included in a mask body to a substrate to form a deposition layer corresponding to a vapor deposition pattern consisting of a lot of independent vapor deposition through-holes on the substrate with high accuracy.SOLUTION: A mask body 2 is constituted so as to include an inner pattern formation area 8 having vapor deposition through-holes 13 and an outer bonded area 9 having an upper surface covered with a metal layer 4. An adsorption area 10 without having a through-hole and/or a depression is provided between the pattern formation area 8 and the bond area 9; and when setting the distance of the adsorption region 10 from the extension tip 4c of the metal layer 4 to the pattern formation area 8 to W2 and setting the distance of the bond area 9 of the mask body 2 to W3, the distance W3 of the bond area 9 and the distance W2 of the adsorption area 10 satisfy an inequality (W3≤W2).SELECTED DRAWING: Figure 1 【課題】枠体の下面に逃げ凹部を備える蒸着マスクにおいて、基板に対してマスク本体が備えるパターン形成領域を適正に密着させて、多数独立の蒸着通孔からなる蒸着パターンに対応した蒸着層を基板上に高精度に形成できるようにする。【解決手段】マスク本体２は、蒸着通孔１３が形成される内側のパターン形成領域８と、上面が金属層４で覆われる外側の接合領域９とを含むように構成する。パターン形成領域８と接合領域９との間に、通孔および／または凹みが形成されない吸着領域１０が設けられている。金属層４の延出先端４ｃからパターン形成領域８までの吸着領域１０の距離をＷ２、マスク本体２の接合領域９の距離をＷ３としたとき、接合領域９の距離Ｗ３と吸着領域１０の距離Ｗ２とが、不等式（Ｗ３≦Ｗ２）を満足するように設定されている。【選択図】図１